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| MCC )HDWXUHV * * * omponents 21201 Itasca Street Chatsworth !"# $ % !"# MJ413 MJ423 MJ431 10 Amp NPN Silicon Power Transistors 125W TO-3 E A N C High Collector-Emitter Voltage VCES=400V DC Current Gain Specified 3.5A High Frequency Response to 2.5 MHz 0D[LPXP5DWLQJV * * * Operating Temperature: -55C to +150C Storage Temperature: -55C to +150C Maximum Thermal Resistance: 1.0:/W junction to case Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Device Dissipation @TC=25: Derate above 25: Symbol VCEX VCB VEB IC IB PD Max 400 400 5.0 10 2.0 125 1.0 Unit Vdc Vdc U D K Vdc Adc Adc Watts W/: H V 2 1 L G B Q PIN 1. PIN 2. CASE. BASE EMITTER COLLECTOR Figure 1 - Power Derating Curve PD - Power Dissipation(W) DIMENSIONS INCHES DIM A B C D E G H K L N Q U V MIN 1.550 ----.250 .038 0.55 .430 .215 .440 .665 ----.151 1.187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 MIN 39.37 ----6.35 0.97 1.40 10.92 5.46 11.18 16.89 ----3.84 30.15 3.33 MM MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE 150 50 100 Temperature C Power Dissipation (W) - Versus - Temperature C 0 www.mccsemi.com MJ413, MJ423 & MJ431 MCC Symbol VCEO(sus) ICEX 0.25 2.5 0.5 5.0 IEBO 5.0 2.0 hFE 20 15 30 10 15 10 VCE(sat) 0.6 0.8 0.7 VBE(sat) 1.25 1.25 1.50 fT MHz 2.5 Vdc 80 90 35 Vdc mAdc (OHFWULFDO &KDUDFWHULVWLFV # & 8QOHVV 2WKHUZLVH 6SHFLILHG Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) (IC=100mA, IB=0) Collector Cutoff Current MJ413 MJ423 (VCE=400V, VEB(off)=1.5V) MJ431 MJ413 MJ423 (VCE=400V, VEB(off)=1.5V, TC=125:) MJ431 Emitter Cutoff Current MJ413 MJ423 (VBE=5.0Vdc, IC=0) MJ431 ON CHARACTERISTICS DC Current Gain MJ413 (IC=0.5A, VCE=5.0V) (IC=1.0A, VCE=5.0V) MJ423 (IC=1.0A, VCE=5.0V) (IC=2.5A, VCE=5.0V) MJ431 (IC=2.5A, VCE=5.0V) (IC=3.0A, VCE=5.0V) Collector-Emitter Saturation Voltage MJ413 (IC=0.5A, IB=0.05A) MJ423 (IC=1.0A, IB=0.1A) MJ431 (IC=2.5A, IB=0.5A) Base-Emitter Saturation Voltage MJ413 (IC=0.5A, IB=0.05A) MJ423 (IC=1.0A, IB=0.1A) MJ431 (IC=2.5A, IB=0.5A) DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (IC=200mA, VCE=10V, f=1.0MHz) (1) Pulse Test: Pulse Width V 'XW\ &\FOH Min 325 Max --- Unit Vdc mAdc 2.0% www.mccsemi.com |
Price & Availability of MJ413
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